note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: TG0004B doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / ssg60n60 ___ ___ ___ screening 2 / __ = not screened tx = tx level txv = txv s = s level lead bend 3 / __ = straight ub = up bend db = down bend package n = to-258, isolated p = to-259, isolated s2 = smd2 ssg60n60 series 85 amp / 600 volts fast power igbt features: ? 600v igbt technology ? positive temperature coefficient for ease of paralleling ? high current switching for motor drives and inverters ? low saturation voltage at high currents ? low switching losses ? high short circuit capability ? mos input, voltage controlled ? hermetic sealed construction ? maximum ratings symbol value units collector ? emitter voltage v ceo 600 v continuous collector current average diode current @ t c = 25oc @ t c = 100oc i c 85 60 a peak collector current i c(pk) 200 a gate ? emitter voltage v ge 20 v operating & storage temperature t j & t stg -65 to +200 oc total device dissipation @ t c = 25oc p d 350 w thermal resistance junction to case n, p s2 r 0 jc 1.0 0.75 oc/w to-258 (n) to-259 (p) smd2 (s2) notes: *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability - contact factory. 2 / screening based on mil-prf-19500. sc reening flows available on request. 3 / up and down bend configurations available for to-258 (n) and to-259 (p) packages only. 4 / unless otherwise specified, all electrical characteristics @25 o c.
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: TG0004B doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ssg60n60 series electrical characteristics 4 / symbol min typ max units collector ? emitter breakdown voltage v ge = 0v, i c = 250 a v ( br ) ces 600 ?? ?? v collector ? emitter saturation voltage v ge = 15v, i c = 60a v ce ( sat ) ?? 2.0 2.5 v gate ? emitter threshold voltage v ge = v ce , i c = 250ma v ge ( th ) 3 ?? 6.5 v zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25 o c t j = 150 o c i ces ?? ?? 0.5 0.35 250 5.0 a ma gate ? emitter leakage current v ge = 20v, v ce = 0v i ges ?? 10 100 na input capacitance v ce = 25v, v ge = 0v, f = 1 mhz c iss ?? 4000 ?? pf output capacitance v ce = 25v, v ge = 0v, f = 1 mhz c oss ?? 300 ?? pf reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1 mhz c rss ?? 55 ?? pf turn on delay time rise time turn off delay time fall time v cc = 400v, i c = 50a dc , v ge = 15v, t p = 10sec, duty cycle 1% t d(on) t r t d(off) t f ?? ?? ?? ?? 85 140 300 150 ?? ?? ?? ?? nsec to-258 (n) to-259 (p) smd2 (s2) available part numbers: ssg60n60n, ssg60n60 nub, ssg60n60ndb, ssg60n60p, ssg60n60pu b, ssg60n60pdb, ssg60n60s2 pin assignment (standard) package collector emitter gate to-258 (n) pin 1 pin 2 pin 3 to-259 (p) pin 1 pin 2 pin 3 smd2 pin 1 pin 2 pin 3
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